TEM Electrical biasing: EBIC Brochure | Hummingbird Scientific

Correlate Electron Beam-Induced Current (EBIC), TEM/STEM imaging, EDS, and EELS to characterize electronic properties of semiconductor devices, functional materials, and nanoelectronic systems.

Technical Specs

1555 series Single-tilt

1555 series Double-tilt

Imaging method

TEM, STEM, EBIC, SEEBIC

2, including while biasing

EBIC Measurement channels

2, including while biasing

TEM, STEM, EBIC, SEEBIC

Sample substrates

FIB Lift-out chips, patterned heating and biasing substrates, wet-transfer substrates

Tilt Range

Up to ± 45° depending on objective pole

Up to ± 15° (alpha and beta) depending on objective pole

Beta-tilt accuracy

N/A

<0.01 degree

Biasing Contacts

9 contacts

Up to 9 contacts

Contact Type

Direct Chip Contact

Heating Temperature

>1000 °C

Temperature Stability

100+ hours

Temperature Measurement

4-point resistance sensing

EELS / EDS Compatible

Yes

Available For:

www.hummingbirdscientific.com ©Hummingbird Scientific 2026 -The specifications provided are subject to change without notice.

Key Features and Capabilities

Two-Channel Electron Beam-Induced Current Measurement

Acquire independent Electron Beam-Induced Current (EBIC) and Secondary Electron Electron Beam-Induced Current (SEEBIC) signals for correlative electronic characterization

Screw-Free Direct Chip Insertion

Load MEMS chips quickly with reliable electrical contact and simplified experiment setup

Correlative EBIC, SEEBIC, TEM/STEM, EDS, and EELS

Relate electronic properties directly to crystal structure and chemical composition during a single experiment

High-Accuracy and Repeatable Double Tilt

Optimize sample orientation for diffraction, crystallography, and analytical TEM workflows using the double-tilt holder configuration

60+ In-Stock TEM Heating and Biasing Chip Configurations

Keep experiments moving with in-stock MEMS chips for in-situ TEM heating, electrical biasing, and STEM EBIC

Integrated Heating

Optional add on

Study temperature-dependent electronic behavior while maintaining correlative TEM/STEM characterization

www.hummingbirdscientific.com ©Hummingbird Scientific 2026 -The specifications provided are subject to change without notice.

Built for Diverse Applications

Semiconductors

Investigate device operation, degradation, and failure in semiconductor materials.

Operando Device Switching

Electromigration Studies

Defect Evolution

Thermal Reliability Testing

Failure Analysis

Quantum Materials

Investigate phase transitions, defect dynamics, and electronic properties in quantum materials.

Phase Transitions

Electronic Properties

Defect Dynamics

Quantum Heterostructures

Domain Evolution

Illustration of battery material particles and spectroscopy

Battery Materials

Directly visualize battery cycling, ion transport, dendrite formation, interface evolution, and structural changes.

Charge-Discharge Cycling

Featured Research

Nanoscale thermometry using two-channel STEM-EBIC and secondary electron emission mapping

The ADF STEM and STEM EBIC images show an un-calibrated Pt heater-electrode structure. The device is shown with the heater oﬀ (top),and with the heater power increased during acquisition (middle). The heater-on image divided by the heater-oﬀ image generates a map of Θ(˜T) (lower-left), which when binned by two can be used to calculate the temperature map (lower-right).

Reference: William A. Hubbard, et al. Nanotechnology (2025). DOI: 10.1088/1361-6528/ade445

www.hummingbirdscientific.com ©Hummingbird Scientific 2026 -The specifications provided are subject to change without notice.

Selected Publications

Cecile S. Bonifacio, William A. Hubbard, Rui Li, Mary L. Ray, Paul E. Fischione. "Improving Stem EBIC Specimen Quality with Argon Ion Beam Milling". Journal of Failure Analysis and Prevention, 25, 2031-2043. (2025).

DOI:

10.1007/s11668-025-02202-x

William A Hubbard, Matthew Mecklenburg, Ho Leung Chan, B C Regan. “Secondary electron emission current mapping for nanoscale thermometry”. Nanotechnology (2025)

DOI:

10.1088/1361-6528/ade445

Ho Leung Chan, Shelby S. Fields, Yueyun Chen, Tristan P. O’Neill, Megan K. Lenox, William A. Hubbard, Jon F. Ihlefeld, Brian C. Regan. “Mapping Ferroelectric Fields Reveals the Origins of the Coercivity Distribution”. ACS Nano (2024)

DOI:

10.1021/acsnano.4c04526

Oscar Recalde-Benitez, Tianshu Jiang, Robert Winkler, Yating Ruan, Alexander Zintler, Esmaeil Adabifiroozjaei, Alexey Arzumanov, William A. Hubbard, Tijn van Omme, Yevheniy Pivak, Hector H. Perez-Garza, B. C. Regan, Lambert Alff, Philipp Komissinskiy, Leopoldo Molina-Luna. “Operando two-terminal devices inside a transmission electron microscope”. Communications Engineering (2023)

DOI:

10.1038/s44172-023-00133-9

William A. Hubbard, Jared J. Lodico, Ho Leung Chan, Matthew Mecklenburg, B. C. Regan. “Nanoscale Conductivity Mapping: Live Imaging of Dielectric Breakdown with STEM EBIC”. IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) (2022)

DOI:

10.1109/IPFA55383.2022.9915733

TEM Electrical Biasing: EBIC

Key Features and Capabilities

Two-Channel Electron Beam-Induced Current Measurement

Screw-Free Direct Chip Insertion

Correlative EBIC, SEEBIC, TEM/STEM, EDS, and EELS

High-Accuracy and Repeatable Double Tilt

60+ In-Stock TEM Heating and Biasing Chip Configurations

Integrated Heating

Built for Diverse Applications

Semiconductors

Quantum Materials

Battery Materials

Featured Research

Selected Publications