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TEM Magnetizing Sample Holder

Operando heating, biasing under environmental conditions

Technical Specs
1700 series
Sample Substrate Size
1 mm x 2 mm
In-Plane Applied Magnetic Flux Density
Up to ±300 Gauss, depending on microscope and pole piece
Electron Imaging
From -300 Gauss to +300 Gauss applied field during imaging depending on microscope and pole piece
Beam Deflection
Integrated passive magnetic beam deflection compensation
Instrument Type
TEM

Available For:

Apply calibrated in-plane magnetic fields up to 900 Gauss during in-situ TEM, Lorentz TEM, and electron holography to correlate magnetic field stimuli with nanoscale structural and magnetic evolution

Key Features and Capabilities

In-Stock Magnetizing Chips

Accelerate magnetic TEM experiments with compatible magnetizing chips that are in stock and ready to ship

Passive Beam Deflection Compensation

Maintain stable TEM imaging during magnetic field application with passive compensation of field-induced electron beam deflection

Calibrated In-Plane Applied Magnetic Field

Generate precisely controlled in-plane magnetic fields of up to ±300 Gauss directly at the specimen during TEM and STEM imaging

How it works

The TEM Magnetizing Sample Holder integrates magnetic field generation, field measurement, and dedicated control hardware into a unified platform for in-situ magnetic field experiments inside the TEM. Samples are first mounted onto compatible microfabricated chips, which are then inserted into the holder. An integrated electromagnet generates calibrated in-plane magnetic fields of up to ±300 Gauss directly at the specimen while imaging inside the TEM.

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The applied magnetic field is continuously measured at the specimen using a built-in calibrated sensor, ensuring accurate field strength measurement throughout the experiment. Researchers can precisely control and cycle the magnetic field to study magnetic switching, domain wall motion, magnetization reversal, spin textures, and other field-driven phenomena in real time. A passive beam deflection compensation system counteracts field-induced electron beam distortion providing a usable range of ±300 Gauss of applied field for imaging, preserving stable TEM/STEM imaging and enabling high-quality TEM, Lorentz TEM, and electron holography during magnetic field application.

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‍Image: (Top) Graph illustrating the maximum applied magnetic  field and the maximum field at which imaging is possible. (Bottom) Schematic showing the magnetic field lines for negative applied field.  The magnetic compensation circuit guides the field around and applies an opposite field above and below the sample position. Colored image to the left shows FEA results of the magnetic fields at the sample.